| PART |
Description |
Maker |
| 2BZX84C4V7 2BZX84C4V3 2BZX84C3V3 2BZX84C39 2BZX84C |
Replacement with:AZ23C4V3
5-Pin, Multiple-Input, Programmable Reset ICs 置换：AZ23C3V3
Replacement with:AZ23C39
Replacement with:AZ23C12
|
Honeywell International, Inc.
|
| 211-501-23-38 211-521-23-38 211-930-23-38 211-521- |
FILAMENT REPLACEMENT LEDs - T3?
FILAMENT REPLACEMENT LEDs - T3录
FILAMENT REPLACEMENT LEDs - T3篓霉
|
Marl International Limited
|
| 80960MC A80960MC-25 |
Embedded 32-bit microprocessor with integrated floating-point unit and memory management unit, 25 MHz
|
INTEL[Intel Corporation]
|
| AD5520 EVAL-AD5520EB AD5520JST AD5520JST-REEL |
Per Pin Parametric Measurement Unit/Source Measure Unit
|
AD[Analog Devices]
|
| 640-980.0M 640-310.0M 640-384.05M 640-315.0M 640-3 |
One-Port 180隆? SAW
One-Port 180掳 SAW
One-Port 180° SAW
Quartz Stability
|
Oscilent Corporation
|
| S1T2410B01 S1T2410B02 DS_S1T2410B01 S1T2410B02-D0B |
From old datasheet system
bipolar integrated circuit designed as a telephone bell replacement
Low drain current,Adjustable 2-frequency tone,Built-in hysteresis
bipolar integrated circuit designed as telephone bell replacement
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| GSRSTC433ID-A GOLLEDGEELECTRONICSLTD-GSRSTC0173A G |
1-PORT SAW RESONATOR, 433.42 MHz
1-PORT SAW RESONATOR, 433.966 MHz
1-PORT SAW RESONATOR, 834.64 MHz
1-PORT SAW RESONATOR, 433.816 MHz
1-PORT SAW RESONATOR, 800 MHz
1-PORT SAW RESONATOR, 644.769 MHz
1-PORT SAW RESONATOR, 719.75 MHz
|
GOLLEDGE ELECTRONICS LTD
|
| MC912DT128ACPV MC912DG128CMPV MC912DG128PCPV MC912 |
The MC68HC912DT128A microcontroller unit (MCU) is a 16-bit device composed of standard on-chip peripherals including a 16-bit central processing unit
|
MOTOROLA[Motorola, Inc]
|
| IDT7133LA IDT7133SA IDT7143LA IDT7143SA IDT7133LA5 |
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS
2K x 16 Dual-Port RAM
HIGH SPEED 2K X 16 DUAL-PORT SRAM
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 90 ns, CPGA68
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 90 ns, PQCC68
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 90 ns, PQFP100
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 90 ns, CQFP68
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 35 ns, CQFP68
30V N-Channel Logic Level PowerTrench MOSFET; Package: SuperSOT; No of Pins: 3; Container: Tape & Reel 2K X 16 DUAL-PORT SRAM, 35 ns, PQFP100
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 25 ns, PQCC68
150V N-Channel UltraFET Trench MOSFET; Package: TO-220; No of Pins: 3; Container: Rail 2K X 16 DUAL-PORT SRAM, 25 ns, CQFP68
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 25 ns, CPGA68
INDUCT 22.8UH 4.9A 260KHZ KLIPMT 2K X 16 DUAL-PORT SRAM, 25 ns, CPGA68
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 高K × 16的CMOS双端口静态存储器
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 45 ns, CQFP68
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 45 ns, PQCC68
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 45 ns, PQFP100
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 70 ns, CQFP68
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 高2K × 16的CMOS双端口静态存储器
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 70 ns, CPGA68
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 70 ns, PQCC68
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 70 ns, PQFP100
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 35 ns, CPGA68
400V N-Channel MOSFET; Package: TO-220; No of Pins: 3; Container: Rail 2K X 16 DUAL-PORT SRAM, 20 ns, PQFP100
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 20 ns, PQFP100
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 35 ns, PQCC68
100V N-Channel Trench MOSFET 2K X 16 DUAL-PORT SRAM, 35 ns, CPGA68
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 55 ns, PQCC68
|
Integrated Device Techn...
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
|
| MU1000S-16 |
Cells Per Unit 1 Voltage Per Unit 2
|
CSB Battery Co., Ltd.
|
| GP672-16 |
Cells Per Unit 3 Voltage Per Unit 6
|
CSB Battery Co., Ltd.
|
| XTV12800 XTV12800-16 |
A general battery up to 12 years expected life in standby service or more than 260 cycles at 100% discharge in cycle service.
Cells per unit 6 Voltage per unit 12
|
CSB Battery Co., Ltd.
|
|
